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ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

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ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

Name: ZXTN25100BFHTA Bipolar BJT Transistor NPN 100 V 3 A 160MHz 125 W RF Transistors
Brand: Diodes Incorporated
Price: 1 USD

Buy cheap ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors product

Brand Name : Diodes Incorporated

Model Number : ZXTN25100BFHTA

Place of Origin : USA

MOQ : 1pcs

Price : Email us for details

Payment Terms : T/T, Western Union

Supply Ability : 5000

Delivery Time : 1day

Packaging Details : Reel

Date Code : Newest code

Shipping by : DHL/UPS/Fedex

Condition : New*Original

Warranty : 365days

Lead free : Rohs Compliant

Lead times : Immediately Shipment

Package : SOT-23-3

Mounting Style : SMD/SMT

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ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount

Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	100 V
Collector- Base Voltage VCBO:	170 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	200 mV
Maximum DC Collector Current:	3 A
Pd - Power Dissipation:	1.81 W
Gain Bandwidth Product fT:	160 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	ZXTN25100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Height:	1 mm
Length:	3.05 mm
Product Type:	BJTs - Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Width:	1.4 mm
Unit Weight:	0.000282 oz

Product Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300mA, 3A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 2V
Power - Max	1.25 W
Frequency - Transition	160MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

Features
BVcEo > 100V
BVcEx > 170V Forward Blocking Voltage
BVEco > 6V Reverse Blocking Voltage
Ic = 3A high Continuous Collector Current
Low Saturation Voltage, VCE(SAT) < 80mV @1A
RCE(SAT)= 67mQ for a Low Equivalent On-Resistance
1.25W Power Dissipation
hFE Specified up to 3A for High Current Gain Hold Up
Complementary PNP Type: ZXTP25100BFH
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free.“Green" Device (Note 3)
Qulified to AEC-Q101 Standards for High Rellbllity

Mechanical Data
Case: SOT23
Case Material: molded plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J -STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 2080@3)
Weight 0.008 grams (Approximate)

Applications
●Lamp Relay and Solenoid Drivers
●General Switching in Automotive and Industrial Applications
●Motor Drive and Control

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

Type: NPN (Negative-Positive-Negative) Bipolar Junction Transistor
Voltage Rating: 100 V (maximum collector-emitter voltage)
Current Rating: 3 A (maximum collector current)
Frequency: 160 MHz (maximum frequency at which it can operate effectively)
Power Dissipation: 1.25 W (maximum power that can be dissipated by the transistor)
Package Type: Surface Mount (SMT) package, which is a type of package that allows

for mounting on the surface of a printed circuit board (PCB) without requiring through-hole soldering.

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors Images

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